Chin. J. Semicond. > Volume 16 > Issue 6 > Article Number: 407

P-型HgCdTe MIS结构反型层激发态子能带结构研究

刘坤,褚君浩,李标,汤定元

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Abstract: 本文在4.2K下获得了P-型HgCdTe反型层有两个子能带被占据时的电容谱.基于多个子带被占据的非量子限情形,提出了一个实验模型.用该模型对实验结果进行了拟合,获得了反型层基态及激发态子能带结构,包括基态子能带能量、第一激发态子能带能量、费米能级、耗尽层厚度、反型层平均厚度以及它们随反型层电子浓度的变化关系.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1995

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