Chin. J. Semicond. > Volume 18 > Issue 8 > Article Number: 581

Si(1-x)Ge_x外延层结构参数的椭偏光谱表征技术研究

张瑞智 and 罗晋生

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Abstract: 本文测量并分析了不同组分的Si1-xGex合金的椭偏光谱,得到了能量范围为2.0~5.0eV内的主要临界点的能量与Ge的组分的关系,给出用椭偏光谱分析Si1-xGex合金厚度和Ge组分的方法.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 August 1997

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