J. Semicond. > Volume 37 > Issue 9 > Article Number: 094003

Vertical-dual-source tunnel FETs with steeper subthreshold swing

Zhi Jiang , , Yiqi Zhuang , Cong Li , Ping Wang and Yuqi Liu

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Abstract: In order to improve the drive current and subthreshold swing (SS), a novel vertical-dual-source tunneling field-effect transistor (VDSTFET) device is proposed in this paper. The influence of source height, channel length and channel thickness on the device are investigated through two-dimensional numerical simulations. Si-VDSTFET have greater tunneling area and thinner channel, showing an on-current as high as 1.24 μA at gate voltage of 0.8 V and drain voltage of 0.5 V, off-current of less than 0.1 fA, an improved average subthreshold swing of 14 mV/dec, and a minimum point slope of 4 mV/dec.

Key words: dual source regions and U-shape-gate tunneling field-effect transistorsubthreshold swingband-to-band tunnelingon-state current

Abstract: In order to improve the drive current and subthreshold swing (SS), a novel vertical-dual-source tunneling field-effect transistor (VDSTFET) device is proposed in this paper. The influence of source height, channel length and channel thickness on the device are investigated through two-dimensional numerical simulations. Si-VDSTFET have greater tunneling area and thinner channel, showing an on-current as high as 1.24 μA at gate voltage of 0.8 V and drain voltage of 0.5 V, off-current of less than 0.1 fA, an improved average subthreshold swing of 14 mV/dec, and a minimum point slope of 4 mV/dec.

Key words: dual source regions and U-shape-gate tunneling field-effect transistorsubthreshold swingband-to-band tunnelingon-state current



References:

[1]

Rawat G, Kumar S, Goel E. Analytical modeling of subthreshold current and subthreshold swing of Gaussian doped strained-Si-on-insulator MOSFETs[J]. Journal of Semiconductors, 2014, 35(8): 084001. doi: 10.1088/1674-4926/35/8/084001

[2]

Jiang Zhi, Zhuang Yiqi, Li Cong. Drive current enhancement in TFET by dual source region[J]. J Electric Comput Eng, 2015, 10(1): 1155.

[3]

Li Cong, Zhuang Yiqi, Wang Ping. A new analytical model for junctionless cylindrical surrounding-gate MOSFETs[J]. IEEE International Conference on Electron Devices and Solid-State {Circuits, 2015, 117(5).

[4]

Li Cong, Zhuang Yiqi, Zhang Li. A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs[J]. Chin Phys B, 2014, 3(5): 038502.

[5]

Lattanzio L, De Michielis L, Ionescu A M. The electron-hole bilayer tunnel FET[J]. Solid-State Electron, 2012, 2012(74): 85.

[6]

Verhulst A S, Leonelli D, Rooyackers R. Drain voltage dependent analytical model of tunnel field-effect transistors[J]. J Appl Phys, 2012, 110(2): 024510.

[7]

Tiwari P K, Saramekala K, Dubey S. Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon-germanium substrates[J]. Journal of Semiconductors, 2014, 35(10): 104002. doi: 10.1088/1674-4926/35/10/104002

[8]

Richter S, Blaeser S, Trellenkamp S. SiGe on SOl nanowire array TFETs with homo- and heterostructure tunnel junctions[J]. Ultimate Integration on Silicon (ULIS), 2013, 6523482: 25.

[9]

Guo Pengfei, Yang Yue, Cheng Yuanbing. Tunneling field-effect transistor with Ge/In0.47As heterostructure as tunneling junction[J]. J Appl Phys, 2013, 113(9): 094502. doi: 10.1063/1.4794010

[10]

Rajoriya A, Shrivastava M. Sub 0.5 V operation of performance driven mobile systems based on area scaled tunnel FET devices[J]. IEEE Electron Device Lett, 2013, 60(8): 2626. doi: 10.1109/TED.2013.2270566

[11]

Wu Y, Hasegawa H, Kakushima K. A novel hetero-junction tunnel-FET using semiconducting silicide-Silicon contact and its scalability[J]. Microelectron Reliab, 2014, 54(5): 899. doi: 10.1016/j.microrel.2014.01.023

[12]

Wang Wei, Wang Pengfei, Zhang Chunmin. Design of U-shape channel tunnel FETs with SiGe source regions[J]. IEEE Trans Electron Devices, 2014, 61(1): 193. doi: 10.1109/TED.2013.2289075

[13]

Kane E O. Theory of tunneling[J]. J Appl Phys, 1961, 32(1): 83. doi: 10.1063/1.1735965

[14]

Kao K H, Verhulst A S. Direct and indirect band-to-band tunneling in germanium-based TFETs[J]. IEEE Trans Electron Devices, 2012, 59(2): 292. doi: 10.1109/TED.2011.2175228

[15]

Knoll L, Richter S. Strained silicon based complementary tunnel-FETs: steep slope switches for energy efficient electronics[J]. Solid-State Electron, 2014, 98(3): 32.

[16]

Ford A C, Yeung C W, Chuang S. Ultrathin body InAs tunneling field-effect transistors on Si substrates[J]. Appl Phys Lett, 2011, 98(11): 113105. doi: 10.1063/1.3567021

[17]

Kazazis D, Jannaty P, Zaslavsky A. Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator[J]. Appl Phys Lett, 2009, 94(26): 263508. doi: 10.1063/1.3168646

[1]

Rawat G, Kumar S, Goel E. Analytical modeling of subthreshold current and subthreshold swing of Gaussian doped strained-Si-on-insulator MOSFETs[J]. Journal of Semiconductors, 2014, 35(8): 084001. doi: 10.1088/1674-4926/35/8/084001

[2]

Jiang Zhi, Zhuang Yiqi, Li Cong. Drive current enhancement in TFET by dual source region[J]. J Electric Comput Eng, 2015, 10(1): 1155.

[3]

Li Cong, Zhuang Yiqi, Wang Ping. A new analytical model for junctionless cylindrical surrounding-gate MOSFETs[J]. IEEE International Conference on Electron Devices and Solid-State {Circuits, 2015, 117(5).

[4]

Li Cong, Zhuang Yiqi, Zhang Li. A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs[J]. Chin Phys B, 2014, 3(5): 038502.

[5]

Lattanzio L, De Michielis L, Ionescu A M. The electron-hole bilayer tunnel FET[J]. Solid-State Electron, 2012, 2012(74): 85.

[6]

Verhulst A S, Leonelli D, Rooyackers R. Drain voltage dependent analytical model of tunnel field-effect transistors[J]. J Appl Phys, 2012, 110(2): 024510.

[7]

Tiwari P K, Saramekala K, Dubey S. Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon-germanium substrates[J]. Journal of Semiconductors, 2014, 35(10): 104002. doi: 10.1088/1674-4926/35/10/104002

[8]

Richter S, Blaeser S, Trellenkamp S. SiGe on SOl nanowire array TFETs with homo- and heterostructure tunnel junctions[J]. Ultimate Integration on Silicon (ULIS), 2013, 6523482: 25.

[9]

Guo Pengfei, Yang Yue, Cheng Yuanbing. Tunneling field-effect transistor with Ge/In0.47As heterostructure as tunneling junction[J]. J Appl Phys, 2013, 113(9): 094502. doi: 10.1063/1.4794010

[10]

Rajoriya A, Shrivastava M. Sub 0.5 V operation of performance driven mobile systems based on area scaled tunnel FET devices[J]. IEEE Electron Device Lett, 2013, 60(8): 2626. doi: 10.1109/TED.2013.2270566

[11]

Wu Y, Hasegawa H, Kakushima K. A novel hetero-junction tunnel-FET using semiconducting silicide-Silicon contact and its scalability[J]. Microelectron Reliab, 2014, 54(5): 899. doi: 10.1016/j.microrel.2014.01.023

[12]

Wang Wei, Wang Pengfei, Zhang Chunmin. Design of U-shape channel tunnel FETs with SiGe source regions[J]. IEEE Trans Electron Devices, 2014, 61(1): 193. doi: 10.1109/TED.2013.2289075

[13]

Kane E O. Theory of tunneling[J]. J Appl Phys, 1961, 32(1): 83. doi: 10.1063/1.1735965

[14]

Kao K H, Verhulst A S. Direct and indirect band-to-band tunneling in germanium-based TFETs[J]. IEEE Trans Electron Devices, 2012, 59(2): 292. doi: 10.1109/TED.2011.2175228

[15]

Knoll L, Richter S. Strained silicon based complementary tunnel-FETs: steep slope switches for energy efficient electronics[J]. Solid-State Electron, 2014, 98(3): 32.

[16]

Ford A C, Yeung C W, Chuang S. Ultrathin body InAs tunneling field-effect transistors on Si substrates[J]. Appl Phys Lett, 2011, 98(11): 113105. doi: 10.1063/1.3567021

[17]

Kazazis D, Jannaty P, Zaslavsky A. Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator[J]. Appl Phys Lett, 2009, 94(26): 263508. doi: 10.1063/1.3168646

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Z Jiang, Y Q Zhuang, C Li, P Wang, Y Q Liu. Vertical-dual-source tunnel FETs with steeper subthreshold swing[J]. J. Semicond., 2016, 37(9): 094003. doi: 10.1088/1674-4926/37/9/094003.

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Manuscript received: 25 February 2016 Manuscript revised: 06 April 2016 Online: Published: 01 September 2016

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