Chin. J. Semicond. > Volume 18 > Issue 6 > Article Number: 424

高性能实用化GaInP-AlGaInP半导体量子阱可见光激光器

熊飞克 , 郭良 , 马骁宇 , 王树堂 and 陈良惠

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Abstract: 用低压MOVPE方法研制出了波长为650nm与670nm的GaInP-AlGaInP半导体量子阱可见光激光器,并已形成一定批量生产能力,批量生产的670nm与650nm半导体量子阱可见光激光器的阈值电流典型值为35mA,额定输出光功率不小于5mw,标称工作温度不低于50℃,预计20℃时寿命接近100000小时,主要技术指标达到目前进口同类产品水平,完全可以满足实用要求。

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1997

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