Chin. J. Semicond. > Volume 18 > Issue 9 > Article Number: 706

一种新的SOI制备技术:H~+离子注入、键合和分离

竺士场 , 张苗 , 林成鲁 , 黄宜平 , 吴东平 and 李金华

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Abstract: H+离子注入Si片并经一定条件退火,可在Si片中形成埋层微空腔(microcavity)层,结合Si片键合技术,用智能剥离(Smart-cut)技术成功地制备了Unibond-SOI材料,并用扩展电阻(SRP)、卢瑟福背散射(RBS/C)和剖面透射电子显微镜(XTEM)等初步分析了其结构和电学性质.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 September 1997

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