J. Semicond. > Volume 36 > Issue 12 > Article Number: 123004

High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process

Yingchun Fu , , Xiaofeng Wang , Liuhong Ma , Yaling Zhou , Xiang Yang , Xiaodong Wang and Fuhua Yang

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Abstract:

Key words: fully confinednanocontactsself-alignedphase change random access memory

Abstract:

Key words: fully confinednanocontactsself-alignedphase change random access memory



References:

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[1]

Sr O. Reversible electrical switching phenomena in disordered structures[J]. Phys Rev Lett, 1968, 21(20): 1450.

[2]

Herderick E D, Reddy K M, Sample R N. Bipolar resistive switching in individual Au-NiO-Au segmented nanowires[J]. Appl Phys Lett, 2009, 95(20): 203505.

[3]

De Franceschi S, Kouwenhoven L, Schönenberger C. Hybrid superconductor-quantum dot devices[J]. Nature Nanotechnology, 2010, 5(10): 703.

[4]

Yan W, Mechau N, Hahn H. Ultraviolet photodetector arrays assembled by dielectrophoresis of ZnO nanoparticles[J]. Nanotechnology, 2010, 21(11): 115501.

[5]

Hamaya K, Masubuchi S, Kawamura M. Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads[J]. Appl Phys Lett, 2007, 90(5): 053108.

[6]

Chishti S, Ghosh B, Bishnoi B. Monte-Carlo simulation studies of the effect of temperature and diameter variation on spin transport in Ⅱ-VI semiconductor nanowires[J]. Journal of Semiconductors, 2015, 36(2): 022001.

[7]

Shibata K, Buizert C, Oiwa A. Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes[J]. Appl Phys Lett, 2007, 91(11): 112102.

[8]

Yu B, Ju S, Sun X. Indium selenide nanowire phase-change memory[J]. Appl Phys Lett, 2007, 91(13): 133119.

[9]

Katsaros G, Spathis P, Stoffel M. Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon[J]. Nature Nanotechnology, 2010, 5(6): 458.

[10]

Xiong F, Bae M H, Dai Y. Self-aligned nanotube-nanowire phase change memory[J]. Nano Lett, 2013, 13(2): 464.

[11]

Qi P, Javey A, Rolandi M. Miniature organic transistors with carbon nanotubes as quasi-one-dimensional electrodes[J]. J Am Chem Soc, 2004, 126(38): 11774.

[12]

Xiong F, Liao A D, Estrada D. Low-power switching of phase-change materials with carbon nanotube electrodes[J]. Science, 2011, 332(6029): 568.

[13]

Ahn J K, Park K W, Jung H J. Phase-change InSbTe nanowires grown in situ at low temperature by metal-organic chemical vapor deposition[J]. Nano Lett, 2010, 10(2): 472.

[14]

Ma H, Wang X, Zhang J. A self-aligned process for phase-change material nanowire confined within metal electrode nanogap[J]. Appl Phys Lett, 2011, 99(17): 173107.

[15]

Zhang J, Wang X, Wang X. Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application[J]. Appl Phys Lett, 2010, 96(21): 213505.

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Y C Fu, X F Wang, L H Ma, Y L Zhou, X Yang, X D Wang, F H Yang. High quality metal-quantum dot-metal structure fabricated with a highly compatible self-aligned process[J]. J. Semicond., 2015, 36(12): 123004. doi: 10.1088/1674-4926/36/12/123004.

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Manuscript received: 07 May 2015 Manuscript revised: Online: Published: 01 December 2015

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