Chin. J. Semicond. > 1981, Volume 2 > Issue 1 > 78-80
|

CONTENTS

SiCl_4/SiH_4-NH_3体系的低压化学蒸汽淀积(LPCVD)氮化硅薄膜研究

王季陶 , 承焕生 , 吴宪平 and 吕以金

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2933 Times PDF downloads: 1126 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 January 1981

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1981  >  2(1): 78-80
      王季陶, 承焕生, 吴宪平, 吕以金. SiCl_4/SiH_4-NH_3体系的低压化学蒸汽淀积(LPCVD)氮化硅薄膜研究[J]. 半导体学报(英文版), 1981, 2(1): 78-80.
      Citation:
      王季陶, 承焕生, 吴宪平, 吕以金. SiCl_4/SiH_4-NH_3体系的低压化学蒸汽淀积(LPCVD)氮化硅薄膜研究[J]. 半导体学报(英文版), 1981, 2(1): 78-80.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return