Chin. J. Semicond. > Volume 2 > Issue 1 > Article Number: 78

SiCl_4/SiH_4-NH_3体系的低压化学蒸汽淀积(LPCVD)氮化硅薄膜研究

王季陶 , 承焕生 , 吴宪平 and 吕以金

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Abstract: <正> 氮化硅薄膜在大规模集成电路制造过程中占有一定的地位.目前国内一般是采用硅烧和氨做原料,用高频加热的方法来淀积氮化硅薄膜.这种高频常压法工艺产量低,耗电多,薄膜均匀性也比较差.从1977年以来,国外基本上普遍推广LPCVD新工艺代替了以往的常压工艺.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 January 1981

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