Chin. J. Semicond. > 1992, Volume 13 > Issue 10 > 636-641
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热解CVD方法制备氧化铍薄膜的研究

徐宝琨 , 杨弘 , 卢致玉 , 岳万刚 , 王子忱 and 赵慕愚

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(10): 636-641
      徐宝琨, 杨弘, 卢致玉, 岳万刚, 王子忱, 赵慕愚. 热解CVD方法制备氧化铍薄膜的研究[J]. 半导体学报(英文版), 1992, 13(10): 636-641.
      Citation:
      徐宝琨, 杨弘, 卢致玉, 岳万刚, 王子忱, 赵慕愚. 热解CVD方法制备氧化铍薄膜的研究[J]. 半导体学报(英文版), 1992, 13(10): 636-641.
      shu

      • Received Date: 2015-08-19

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