Chin. J. Semicond. > 1992, Volume 13 > Issue 10 > 636-641
|

CONTENTS

热解CVD方法制备氧化铍薄膜的研究

徐宝琨 , 杨弘 , 卢致玉 , 岳万刚 , 王子忱 and 赵慕愚

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2612 Times PDF downloads: 857 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 October 1992

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1992  >  13(10): 636-641
      徐宝琨, 杨弘, 卢致玉, 岳万刚, 王子忱, 赵慕愚. 热解CVD方法制备氧化铍薄膜的研究[J]. 半导体学报(英文版), 1992, 13(10): 636-641.
      Citation:
      徐宝琨, 杨弘, 卢致玉, 岳万刚, 王子忱, 赵慕愚. 热解CVD方法制备氧化铍薄膜的研究[J]. 半导体学报(英文版), 1992, 13(10): 636-641.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return