Chin. J. Semicond. > Volume 13 > Issue 10 > Article Number: 636

热解CVD方法制备氧化铍薄膜的研究

徐宝琨 , 杨弘 , 卢致玉 , 岳万刚 , 王子忱 and 赵慕愚

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 本文用碱式甲酸铍为源,在源区温度250—330℃,沉积区温度440—650℃的条件下,利用热解CVD方法制得了BeO薄膜,并对BeO 薄膜的物理和化学性能做了测量和试验.

Search

Advanced Search >>

Article Metrics

Article views: 1723 Times PDF downloads: 857 Times Cited by: 0 Times

History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1992

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误