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Chin. J. Semicond. > Volume 13 > Issue 10 > Article Number: 636

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热解CVD方法制备氧化铍薄膜的研究

徐宝琨 , 杨弘 , 卢致玉 , 岳万刚 , 王子忱 and 赵慕愚

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Abstract: 本文用碱式甲酸铍为源,在源区温度250—330℃,沉积区温度440—650℃的条件下,利用热解CVD方法制得了BeO薄膜,并对BeO 薄膜的物理和化学性能做了测量和试验.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1992

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