Chin. J. Semicond. > Volume 18 > Issue 5 > Article Number: 385

MOVPE生长GaN的准热大学模型及其相图

段树坤 and 陆大成

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Abstract: 本文基于准热力学平衡模型对以TMGa和NH3为源的MOVPE生长GaN的过程进行了分析,并在此基础上计算了MOVPE生长GaN的相图.GaN的MOVPE相图由GaN(s)单凝聚相区、GaN(s)+Ga(1)双凝聚相区、表面会形成Ga滴和不会形成Ga滴的两个腐蚀区构成.本文着重讨论了生长温度、反应室压力、载气组分、NH3分解率和V/Ⅲ比对GaN单凝聚相区边界的影响.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 May 1997

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