Chin. J. Semicond. > Volume 19 > Issue 8 > Article Number: 591

GaAs场效应微波功率器件稳态热场分析的等效结构模型

张鸿欣

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Abstract: 提出了用于计算GaAs场效应微波功率器件峰值沟道温度的等效结构模型.其中底座与芯片等截面的等效厚度处理和多胞单胞化处理,使计算工作量下降约二个数量级.计算的峰值沟道温度与修正(包括了胞内热场分布影响、胞间热场分布影响和瞬态冷却过程影响)后的电学法测量值的差别约为3℃.文中还用此模型模拟了若干工艺参数对峰值沟道温度的影响

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 August 1998

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