Chin. J. Semicond. > 1998, Volume 19 > Issue 8 > 583-590
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nc-Si∶H/c-Si量子点二极管中的共振隧穿特性分析

彭英才 , 刘明 , 余明斌 , 李月霞 , 奚中和 and 何宇亮

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    Received: 18 August 2015 Revised: Online: Published: 01 August 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(8): 583-590
      彭英才, 刘明, 余明斌, 李月霞, 奚中和, 何宇亮. nc-Si∶H/c-Si量子点二极管中的共振隧穿特性分析[J]. 半导体学报(英文版), 1998, 19(8): 583-590.
      Citation:
      彭英才, 刘明, 余明斌, 李月霞, 奚中和, 何宇亮. nc-Si∶H/c-Si量子点二极管中的共振隧穿特性分析[J]. 半导体学报(英文版), 1998, 19(8): 583-590.
      shu

      • Received Date: 2015-08-18

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