Chin. J. Semicond. > Volume 19 > Issue 8 > Article Number: 583

nc-Si∶H/c-Si量子点二极管中的共振隧穿特性分析

彭英才 , 刘明 , 余明斌 , 李月霞 , 奚中和 and 何宇亮

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Abstract: 采用常规PECVD工艺,在N型单晶硅(c-Si)衬底上沉积薄层纳米Si(nc-Si)膜,并进而制备了nc-Si∶H/c-Si量子点二极管.在10~100K温度范围内实验研究了该结构的σ-V和I-V特性.结果指出,当反向偏压为-7~-9V时,无论在σ-V还是在I-V特性曲线上都观测到了近乎等间距的量子化台阶,此起因于在nc-Si∶H膜中具有无序排布且粒径大小不一的Si微晶粒中,由于微晶粒中能级的量子化而导致的共振隧穿现象.如果进一步改进膜层生长工艺,以制备出具有趋于有序排布、尺寸均匀和粒径更小的Si微晶粒的

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 August 1998

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