Chin. J. Semicond. > Volume 11 > Issue 3 > Article Number: 170

掺铁半绝缘磷化铟的深能级研究

彭承 , 李建林 , 陆峻 and 孙恒慧

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Abstract: 文章简要地叙述了光激电流瞬态谱(PICTS)及恒流光电导(CCPC)设备的建立过程及测量方法。并首次用二种方法结合起来以研究掺铁半绝缘磷化铟(InP)中深能级的热电离能,载流子的发射与俘获特性,杂质波函数的局域程度及电子与晶格之间的相互作用。并给出了铁能级在禁带中的确切能量位置。

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 March 1990

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