Abstract: 本文着重研究了Ⅲ—Ⅴ族混晶半导体Ga_(1-x)AlAs Raman谱在不同温度下的多级共振行为。分析了二级及多级声子谱增强及产生的物理原因,从一个新的侧面证实了激子-LO声子复合体作为Raman散射中间态存在的可能性。同时,还从Raman散射张量出发,对近共振条件下TO声子的消失进行了讨论。
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Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 March 1990
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