Chin. J. Semicond. > Volume 11 > Issue 3 > Article Number: 182

Ge中热空穴输运的格林函数方法

唐刚 and 徐婉棠

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Abstract: 1985年X.L.Lei(雷啸林)和C.S.Ting(丁秦生)提出了热电子输运的格林函数方法,本文则是把他们的方法推广应用到非球形的扭曲等能面的情况,计算了半导体Ge中的热空穴在晶格温度T=77K,190K和300K时,场强在20V·cm~(-1)≤E≤10~4·V·cm~(-1),电场方向分别沿<100>方向和<111>方向的空穴漂移速度和热电子温度,得到了与实验比较相符的结果,并对重空穴能带的非二次性效应对漂移速度的影响也进行了初步的计算和讨论。

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 March 1990

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