Fig1.
$\[\Delta {{I}_{\text{b}}}\]$ of LM741 versus total dose for 3 MeV proton irradiation at different bias conditions.
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| Citation: |
Ke Jiang, Wu Lu, Qi Guo, Chengfa He, Xin Wang, Muohan Liu, Xiaolong Li. Proton radiation effect of NPN-input operational amplifier under different bias conditions[J]. Journal of Semiconductors, 2015, 36(12): 125001. doi: 10.1088/1674-4926/36/12/125001
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K Jiang, W Lu, Q Guo, C F He, X Wang, M O H Liu, X L Li. Proton radiation effect of NPN-input operational amplifier under different bias conditions[J]. J. Semicond., 2015, 36(12): 125001. doi: 10.1088/1674-4926/36/12/125001.
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Proton radiation effect of NPN-input operational amplifier under different bias conditions
DOI: 10.1088/1674-4926/36/12/125001
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Abstract
NPN-input bipolar operational amplifiers LM741 were irradiated with 60Co γ-ray, 3 MeV protons and 10 MeV protons respectively at different biases to investigating the proton radiation response of the NPN-input operational amplifier. The comparison of protons with 60Co γ-rays showed that the proton radiation mainly induced ionization damage in LM741. Under different bias conditions, the radiation sensitivity is different; zero biased devices show more radiation sensitivity in the input biased current than forward biased devices. Supply current(±Icc) is another parameter that is sensitive to proton radiation, 60Co γ-ray, 3 MeV and 10 MeV proton irradiation would induce a different irradiation response in ±Icc, which is caused by different ionization energy deposition and displacement energy deposition of 60Co γ-ray, 3 MeV and 10 MeV proton irradiation. -
References
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