J. Semicond. > Volume 36 > Issue 12 > Article Number: 125001

Proton radiation effect of NPN-input operational amplifier under different bias conditions

Ke Jiang 1, 2, 3, , Wu Lu 1, 2, , , Qi Guo 1, 2, , Chengfa He 1, 2, , Xin Wang 1, 2, 3, , Muohan Liu 1, 2, 3, and Xiaolong Li 1, 2, 3,

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Abstract: NPN-input bipolar operational amplifiers LM741 were irradiated with 60Co γ-ray, 3 MeV protons and 10 MeV protons respectively at different biases to investigating the proton radiation response of the NPN-input operational amplifier. The comparison of protons with 60Co γ-rays showed that the proton radiation mainly induced ionization damage in LM741. Under different bias conditions, the radiation sensitivity is different; zero biased devices show more radiation sensitivity in the input biased current than forward biased devices. Supply current(±Icc) is another parameter that is sensitive to proton radiation, 60Co γ-ray, 3 MeV and 10 MeV proton irradiation would induce a different irradiation response in ±Icc, which is caused by different ionization energy deposition and displacement energy deposition of 60Co γ-ray, 3 MeV and 10 MeV proton irradiation.

Key words: NPN input bipolar operational amplifierproton radiationdifferent biasesradiation effect

Abstract: NPN-input bipolar operational amplifiers LM741 were irradiated with 60Co γ-ray, 3 MeV protons and 10 MeV protons respectively at different biases to investigating the proton radiation response of the NPN-input operational amplifier. The comparison of protons with 60Co γ-rays showed that the proton radiation mainly induced ionization damage in LM741. Under different bias conditions, the radiation sensitivity is different; zero biased devices show more radiation sensitivity in the input biased current than forward biased devices. Supply current(±Icc) is another parameter that is sensitive to proton radiation, 60Co γ-ray, 3 MeV and 10 MeV proton irradiation would induce a different irradiation response in ±Icc, which is caused by different ionization energy deposition and displacement energy deposition of 60Co γ-ray, 3 MeV and 10 MeV proton irradiation.

Key words: NPN input bipolar operational amplifierproton radiationdifferent biasesradiation effect



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Hu Tianle, Lu Wu, Xi Shanbin. Effects of irradiation on PNP input bipolar operational amplifiers in different radiation environments and under various post-annealing treatments[J]. Acta Phys Sin, 2013, 62(7): 325.

[2]

Lu Wu, Ren Diyuan, Guo Qi. Radiation effects and annealing characteristics of bipolar operational amplifiers[J]. Chinese Journal of Semiconductors, 1998, 19(5): 55.

[3]

Enlow E W, Pease , R L, Combs W. Response of advanced bipolar processes to ionizing radiation[J]. IEEE Nucl Sci, 1992, 38(6): 1342.

[4]

Barnaby H J, Smith S K. Analytical model for proton radiation effects in bipolar devices[J]. IEEE Trans Nucl Sci, 2002, 49(6): 2643.

[5]

Barnaby H J, Sternberg A L, Pease R L. Proton radiation response mechanisms in bipolar analog circuits[J]. IEEE Trans Nucl Sci, 2001, 48(6): 2074.

[6]

Rax B G, Johnston A H, Miyahira T. Displacement damage in bipolar linear integrated circuits[J]. IEEE Trans Nucl Sci, 1999, 46(6): 1660.

[7]

Nowlin R N, Enlow E N, Schrimpf R D. Trends in total-dose response of modern bipolar transistors[J]. IEEE Trans Nucl Sci, 1992, 39(6): 2026.

[8]

Pershenkov V S, Maslov V B, Cherepko S V. The effect of emitter junction bias on the low dose-rate radiation response of bipolar[J]. IEEE Trans Nucl Sci, 1997, 44(6): 1840.

[9]

Tallon R W, Ackermann M R, Kemp W T. A comparison of ionizing radiation damage in MOSFETS from cobalt-60 gamma rays, 0.5 to 22 MeV protons and 1 to 7 MeV electrons.[J]. IEEE Trans Nucl Sci,, 1985, NS-32(6): 4393.

[10]

Oldham T R, McGarrity J M. Ionization of SiO2 by heavy charged particles[J]. IEEE Trans Nucl Sci, 1981, NS-28(6): 3975.

[11]

Nichols D K, Price W E, Gauthier M K. A comparison of radiation damage in transistors from cobalt-60 gamma rays and 2[J]. IEEE Trans Nucl Sci, 1982, 29(6): 1970.

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K Jiang, W Lu, Q Guo, C F He, X Wang, M O H Liu, X L Li. Proton radiation effect of NPN-input operational amplifier under different bias conditions[J]. J. Semicond., 2015, 36(12): 125001. doi: 10.1088/1674-4926/36/12/125001.

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Manuscript received: 07 March 2014 Manuscript revised: Online: Published: 01 December 2015

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