Chin. J. Semicond. > Volume 15 > Issue 10 > Article Number: 716

Nb/C_(60)/p型Si结构的特性

陈开茅,金泗轩,贾勇强,吴克,李传义,顾镇南,周锡煌

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Abstract: 研究了Nb/C60/P型Si结构的电学特性.I-V结果表明这一结构具有强整流效应,这意味着在C60/Si界面附近存在着一个势垒,或称C60/Si异质结.高频C-V结果表明在C60层中存有约1012~1013cm-2的可动负离子.这些离子的松弛温度高于350K,冻结温度低于260K,以及在300-370K的测量温度范围内,C60膜的相对介电常数与温度无关,即εC60=3.7±0.1.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1994

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