Chin. J. Semicond. > Volume 15 > Issue 10 > Article Number: 711

GaAs/AlGaAs双量子阱中量子相干特性的研究

王杏华,郑厚植,李承芳,刘剑,杨小平,余琦

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 研究了低温、平行磁场下两种GaAs/AlGaAs双量子阱的量子干涉特性.两种样品的阱宽均为60,但挚垒层厚度不同,分别为120和20.实验结果表明,样品的电导随磁场呈周期性振荡,振荡周期近似为h/(e·S),这一结果同Aharonov-Bohm效应的理论值相吻合。我们也发现,薄势垒层样品比厚势垒层样品的电导振荡幅度更大一些.

Search

Advanced Search >>

Article Metrics

Article views: 1625 Times PDF downloads: 1182 Times Cited by: 0 Times

History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1994

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误