Chin. J. Semicond. > Volume 15 > Issue 10 > Article Number: 704

F~++B~+双注入浅结研究

李金华,林成鲁,冒建军,何建军,邹世昌

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Abstract: 对不同条件的F++B+双注入样品和对应能量的B+和BF2+注入样品,作1100℃.10秒的瞬时热退火,然后用扩展电阻仪测量其载流子分布和结深.结果显示,用1e15/cm2的F+预注入能有效地抑制低能B+注入的沟道效应,获得陡直的浅结.对样品的结特性测试表明,F++B+双注入样品的结漏电与B+注入样品一致,小于对应能量的BF2+注入样品.RBS/C分析表明,只要在材底近表面附近单晶中有高浓度的间隙原子区,就能抑制低能B+注入的沟道效应,并非必需使衬底达到预非晶状态

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1994

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