Chin. J. Semicond. > 1992, Volume 13 > Issue 2 > 109-115
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具有MIS结构的n-AlGaAs/InGaAs/n-GaAs双调制掺杂赝HEMT

相奇 , 罗晋生 , 曾庆明 , 周均铭 and 黄绮

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(2): 109-115
      相奇, 罗晋生, 曾庆明, 周均铭, 黄绮. 具有MIS结构的n-AlGaAs/InGaAs/n-GaAs双调制掺杂赝HEMT[J]. 半导体学报(英文版), 1992, 13(2): 109-115.
      Citation:
      相奇, 罗晋生, 曾庆明, 周均铭, 黄绮. 具有MIS结构的n-AlGaAs/InGaAs/n-GaAs双调制掺杂赝HEMT[J]. 半导体学报(英文版), 1992, 13(2): 109-115.
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      • Received Date: 2015-08-19

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