Chin. J. Semicond. > Volume 13 > Issue 2 > Article Number: 109

具有MIS结构的n-AlGaAs/InGaAs/n-GaAs双调制掺杂赝HEMT

相奇 , 罗晋生 , 曾庆明 , 周均铭 and 黄绮

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Abstract: 本文设计和研制了具有MIS结构的n-AlGaAs/InGaAs/n-GaAs 双调制掺杂赝HEMT.它结合了MISFET和双调制掺杂赝HEMT的特点.1μm栅长器件的最大漏电流密度达400mA/mm,栅反向击穿电压高达15V.器件还显示了良好的微波射频特性.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1992

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