Chin. J. Semicond. > Volume 13 > Issue 6 > Article Number: 386

PECVD SiON膜的性质及其在双层互连工艺中的应用

曾天亮 , 陈平 , 江志庚 and 李志彭

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Abstract: 我们在研制和生产双层布线的 3μm CMOS LSI器件时,采用了 PECVD SiON(等离子增强化学气相沉积的氮氧化硅)膜作金属层之间的绝缘层.这种薄膜具有很小的压应力,很低的针孔密度,良好的台阶覆盖性等优点.这种绝缘膜是采用PECVD沉积工艺,以氮冲稀的低浓度SiH_4(3%)和N_2O气体为原料制得的. 本文着重介绍 PECVD SiON膜的性质及其在双层互连工艺中的应用.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1992

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