Chin. J. Semicond. > Volume 18 > Issue 8 > Article Number: 631

InAs/GaAs自组织生长量子点结构中浸润层光致发光研究

吕振东 , 徐仲英 , 郑宝真 , 许继宗 , 王玉琦 , 王建农 and 葛惟锟

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Abstract: 当激发光能量小于GaAs势垒带边能量时,在InAs量子点结构中,清楚地观察到与InAs浸润层有关的发光峰.研究表明,此发光峰主要来源于浸润层中局域态激子发光,局域化能量为12meV,发光具有二维特性.在相同的生长条件下,此发光峰位置与InAs层的厚度基本无关.这些结果有助于进一步深入研究浸润层的形貌和光学性质.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 August 1997

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