Chin. J. Semicond. > 1997, Volume 18 > Issue 8 > 636-640

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Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT

张兴宏 , 杨玉芬 and 王占国

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(8): 636-640
      张兴宏, 杨玉芬, 王占国. Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT[J]. 半导体学报(英文版), 1997, 18(8): 636-640.
      Citation:
      张兴宏, 杨玉芬, 王占国. Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT[J]. 半导体学报(英文版), 1997, 18(8): 636-640.
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      • Received Date: 2015-08-19

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