Chin. J. Semicond. > Volume 18 > Issue 8 > Article Number: 636

Two-Dimensional Simulation of Interface States Effect on AlGaAs/GaAs HEMT

张兴宏 , 杨玉芬 and 王占国

+ Author Affiliations + Find other works by these authors


Abstract: In most heterostructures there are various interface states due to lattice mismatch or imperfections at the interface.The properties of an AlGaAs/GaAs interface are intimately related to the device performance.The existence of interface states in an Al.Ga,-.As/GaAs heteros...


Advanced Search >>

Article Metrics

Article views: 1619 Times PDF downloads: 1185 Times Cited by: 0 Times


Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 August 1997

Email This Article

User name: