Chin. J. Semicond. > Volume 14 > Issue 11 > Article Number: 695

在超高真空系统中对硅表面进行电子束退火的L_(23)VV Auger能谱精细结构分析

卢志恒 , 王大椿 , 罗晏 , 苏颖 and R.Pfandzelter

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Abstract: 本文首先报道了在清洁的Si(100)表面观察到L_(23)VV的7条Auger精细谱线。经过短时间的电子束退火后又观察到能量为62.8eV和68.1eV两条谱线。前者可以用Si-O系统。L_(23)(Si)L_1(O)O_1(O)的交叉跃迁来解释;后者虽已有报道,但在解释上引起争议。本文根据实验认为它与C在Si表面的吸附有关。

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 November 1993

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