Chin. J. Semicond. > Volume 15 > Issue 10 > Article Number: 694

基于MBE的GaAlAs/GaAs分布反馈式半导体激光器的制作新工艺

罗毅,张盛忠,司伟民,陈镝,王健华

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Abstract: 利用分子束外延(MBE)对GaAIAs和GaAs的选择性热蚀特性进行光栅上的二次外延生长,既能获得清洁的外延界面,又能精确控制光栅的形状.采用这种方法,我们在国际上首次成功地制作了完全MBE生长的内含吸收光栅的GaAlAs/GaAs多量子阱增益耦合型分布反馈式(DFB)半导体激光器.并实现了激光器在室温下的脉冲激射,、器件表现出了DFB模式的单模工作特性.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1994

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