Chin. J. Semicond. > Volume 10 > Issue 1 > Article Number: 72

激光结晶a-Si:H SOI离子注入和快速退火

顾清 and 鲍希茂

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.

Search

Advanced Search >>

Article Metrics

Article views: 1887 Times PDF downloads: 1076 Times Cited by: 0 Times

History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1989

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误