Chin. J. Semicond. > Volume 10 > Issue 1 > Article Number: 67

利用静止畴原理制作的高灵敏度新型GaAs Hall器件

郑一阳

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Abstract: 本文用计算机模拟分析了GaAs Hall器件的工作原理,当体内出现静止畴并扩展到Hall器件的电压端时,器件输出阻抗增加,Hall器件的灵敏度相应提高一个数量级;获得高灵敏度的静止畴型的GaAs Hall器件;在实验上证实了这一结果.这种新工作模式的器件将能得到更广泛的应用.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1989

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