Chin. J. Semicond. > 1989, Volume 10 > Issue 1 > 67-71
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利用静止畴原理制作的高灵敏度新型GaAs Hall器件

郑一阳

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(1): 67-71
      郑一阳. 利用静止畴原理制作的高灵敏度新型GaAs Hall器件[J]. 半导体学报(英文版), 1989, 10(1): 67-71.
      Citation:
      郑一阳. 利用静止畴原理制作的高灵敏度新型GaAs Hall器件[J]. 半导体学报(英文版), 1989, 10(1): 67-71.
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      • Received Date: 2015-08-19

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