Chin. J. Semicond. > Volume 10 > Issue 1 > Article Number: 62

采用离子注入方法调整和控制氢离子敏场效应管(pH-ISFET)阈值电压

汪正孝

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Abstract: 本文首先分析了影响pH-ISFET阈值电压的几个因素.随后给出了在不同的离子注入参数下SOS型MISFET的阈值电压(V_T)_M及对应的参比电极-溶液-pH-ISFET的阈值电压(V_T)_R和△V_T=(V_T)_R-(V_T)_M的实测值曲线.最后对结果进行了讨论.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1989

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