Chin. J. Semicond. > Volume 13 > Issue 7 > Article Number: 448

辉光放电电子束掺杂硼浅结

李秀琼 , 王纯 , 马祥彬 and 杨军

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Abstract: 一种新的半导体掺杂方法——电子束掺杂法成功地用于实现掺硼浅结.它是用辉光放电电子束辐照涂敷杂质源的半导体表面,形成高浓度(≥10~(20)/cm~3)、浅结(≤0.1μm)掺杂层.损伤比离子注入的小.试制成功的太阳敏感器件性能优良.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 July 1992

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