Chin. J. Semicond. > Volume 1 > Issue 1 > Article Number: 65

GaAs MESFET外延层中载流子浓度分布及漂移迁移率分布的实验测定

张友渝

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Abstract: 提出一种根据 C_g-V_g及 G_i-V_g关系测定 GaA: MESFET外延层中载流子浓度分布n(h)及漂移迁移率分布μ(h)的方法.给出了一些典型外延材料的实验结果.证明n(h)和μ(h)是表征外延层质量的两个重要的参数.并且发现:不同类型的迁移率分布对应于不同的栅电容弛豫.指出用稳态高频栅电容C_g~*-V_g关系求得的是表观载流子浓度分布n~*(h)和表观迁移率分布μ~*(h).它们同样可以表征外延层的质量.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 January 1980

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