Chin. J. Semicond. > 1980, Volume 1 > Issue 1 > 65-75
|

CONTENTS

GaAs MESFET外延层中载流子浓度分布及漂移迁移率分布的实验测定

张友渝

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4459 Times PDF downloads: 2207 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 January 1980

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1980  >  1(1): 65-75
      张友渝. GaAs MESFET外延层中载流子浓度分布及漂移迁移率分布的实验测定[J]. 半导体学报(英文版), 1980, 1(1): 65-75.
      Citation:
      张友渝. GaAs MESFET外延层中载流子浓度分布及漂移迁移率分布的实验测定[J]. 半导体学报(英文版), 1980, 1(1): 65-75.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return