Chin. J. Semicond. > Volume 10 > Issue 2 > Article Number: 124

二氧化锡材料气敏机理的研究

张维新 and 柳连俊

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Abstract: 本文建立了氧离子陷阱势垒模型来说明多晶SnO_2材料的导电机制与气敏机理,推导出了不同情况下SnO_2灵敏度与还原性气体浓度的关系,以及影响该灵敏度的结构参数.实验结果表明,提出的模型能较好地解释SnO_2材料的各种气敏特性.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1989

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