Chin. J. Semicond. > Volume 12 > Issue 5 > Article Number: 294

离化团束方法在GaAs衬底上外延CdTe单晶薄膜

冯嘉猷 , 汤海鹏 , 朱洪林 , 范玉殿 and 李恒德

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Abstract: 利用离化团束外延(ICBE)技术在GaAs(100)衬底上生长了(100)和(111)两种晶向的CdTe外延层.X光衍射和 RHEED分析结果表明外延层为单晶薄膜,双晶衍射摆动曲线半高宽达630弧秒.本文研究了离化团能量和生长温度对外延层晶向和质量的关系。结果表明,当预热处理温度为480℃,外延取向关系为CdTe(100)//GaAs(100);当预热处理为580℃,外延取向关系为 CdTe(100)+(111)//GaAs(100).离化团束的能量对外延膜的结晶性能起着重要作用.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 May 1991

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