Chin. J. Semicond. > Volume 12 > Issue 5 > Article Number: 289

用分子束外延在多孔硅衬底上外延单晶硅来实现SOI结构

周国良 , 盛篪 , 樊永良 , 张翔九 , 俞鸣人 and 黄宜平

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Abstract: 用 HF溶液对单晶Si片进行阳极化处理,形成多孔 Si.将多孔Si衬底放入超高真空室在小剂量的Si原子束辐照下进行加热处理,在较低温度下(725—750℃)获得了清洁有序的表面.用分子束外延在多孔Si上生长了1-2μm的单晶Si膜,其卢瑟福背散射沟道产额极小X_(min)<3%,表明外延膜的单晶性能良好.SOI结构已通过随后的侧向氧化多孔Si层获得.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 May 1991

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