Chin. J. Semicond. > Volume 19 > Issue 11 > Article Number: 818

应变层超晶格Zn_(1-x)Cd_xSe/ZnSe和ZnSe/ZnS_xSe_(1-x)光致发光谱

史向华 , 柯练 , 靳彩霞 , 魏彦峰 , 凌震 , 俞根才 and 王杰

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Abstract: 本文报道了分子束外延生长的应变层超晶格Zn0.77Cd0.23Se/ZnSe和ZnSe/ZnS0.12Se0.88的光致发光谱.分析了影响激子线型展宽的主要因素.定量表征了4.4K下合金涨落和阱厚涨落对线型展宽的贡献.理论分析表明,在低温(4.4K)下,合金涨落和阱宽涨落对线型展宽起主导作用.对比结果显示,Zn0.77Cd0.23Se/ZnSe超晶格的合金涨落和阱宽涨落对线型展宽的贡献大于ZnSe/ZnS0.12Se0.88超晶格

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 November 1998

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