Chin. J. Semicond. > Volume 8 > Issue 6 > Article Number: 670

As-Se非晶态半导体的结构弛豫对光电导光强关系及瞬态过程的影响

陈玲荣 and 闵嗣桂

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Abstract: 本文研究了As-Se非晶态半导体光电导与光强的关系,及光电导瞬态过程.发现瞬态光电导具有前冲、峰值;并且σ_(?)与G的关系有非线性等反常现象.作者用As-Se非晶态半导体的结构弛豫与缺陷组态间的关系进行分析,解释了实验结果.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1987

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