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Chin. J. Semicond. > Volume 8 > Issue 6 > Article Number: 665

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硅中注铅的连续CO_2激光退火行为

殷士端 , 张敬平 , 顾诠 and 陆珉华

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Abstract: 在(111)Si中以 350 keV,1×10~(15)和 5×10~(15)/cm~2注入Pb并进行连续 CO_2激光退火.用背散射RBS和透射电子显微镜TEM研究退火前后的杂质分布和辐射损伤.实验表明,上述退火处理能消除以剂量1×10~(15)/cm~2注入形成的损伤,而当剂量为5×10~(15)/cm~2时,在超过溶解度的高杂质浓度区,外延生长受到阻挡.再生长终止以后,表面形成多晶结构,杂质沿晶粒边界向外扩散.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1987

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