Chin. J. Semicond. > Volume 16 > Issue 8 > Article Number: 632

Si_(1-x)Ge_x合金的浅杂质光电导谱

石晓红,陈忠辉,黄醒良,史国良,刘普霖,沈学础

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Abstract: 在4.2—50K温度范围内研究了直拉法生长的富含Si的Si(1-x)Gex合金的浅杂质光电导谱,首次观察到了锗硅合金中从硼受主杂质基态到p3/2价带的光电离跃迁过程及硼受主杂质的与自旋-轨道分裂带(p1/2价带)相联系折光电导过程,并由此确定了硼杂质的电离能.结果表明,低锗组分下,Si(1-x)Gex合金中浅受主杂质电离能随合金组分线性变化.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 August 1995

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