Chin. J. Semicond. > Volume 16 > Issue 6 > Article Number: 434

MBE-GaAs/Si材料晶体质量对少子扩散长度的影响

胡雨生,汪乐

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Abstract: 对于GaAs/Si材料由于晶格失配和热膨胀系数失配,外延时必然会出现大量的失配位错等缺陷进入外延层,为了更有效地消除或减弱由于以上二种失配所引入的失配位错等缺陷,本文采用高温快速热退火的方法,结合表面光伏(SPV),微波光电导谱(MPCS),双晶衍射(DCRD)等测试手段在整个高温热退火区域寻求一个对具有一定GaAs层厚度的GaAs/Si材料最佳热退火温度To,经此温度To快速热退火后,由SPV,MPCS所测得的GaAs外延层少子扩散长度Lp数值达最大,DCRD所测得双晶衍射半峰竞也明显变窄,各项指标均有

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1995

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