Chin. J. Semicond. > Volume 16 > Issue 6 > Article Number: 439

非晶硅X-射线探测阵列的研究

郑怀德,廖显伯,孔光临,刁宏伟,万旭东,夏传钺,潘广勒,肖君

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Abstract: 研制出a-Si:Hpin型X-射线间接探测线阵,它探测的是X-射线在闪光体(Csl)所激发的荧光,制备出单元面积分别为2.5×2.5mm2、1.6×1.6mm2和100×100μm2的16、25、320单元的线阵.器件的暗电流达到1e-12A/mm2(-10mV),光灵敏度~0.35μA/μW(600nm).本文报道了X-射线探测阵列的制备及测试结果.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1995

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