Chin. J. Semicond. > Volume 17 > Issue 7 > Article Number: 506

微氮硅单晶中新施主的形成特性

杨德仁,樊瑞新,李立本,阙端麟

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Abstract: 借助于电学测量和低温(8K)红外分析技术,研究了微氮硅单晶中新施主的形成特性在650℃长时间热处理后,微氮硅单晶不产生新施主,其中氮破坏了新施主的可能形核中心低温450℃预退火能促进新施主生成,而高温1050℃预退火样品则同样没有新施主生成.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 July 1996

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