Chin. J. Semicond. > Volume 19 > Issue 11 > Article Number: 846

热载流子简并效应研究

孔军 and 杨之廉

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Abstract: 本文通过把能量输运模型扩展到Fermi统计情形,用数值方法研究了简并效应对半导体器件的热载流子输运的影响.对窄基区BJT的模拟表明,当注入浓度很高时,载流子简并效应对热载流子输运的影响是不可忽略的

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 November 1998

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