Chin. J. Semicond. > Volume 14 > Issue 2 > Article Number: 83

钛在硅浅结互连中引进深能级的研究

李秀琼 , 卢励吾 and 陈维德

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Abstract: 钛在硅浅结互连中作为铝硅阻挡层已成功地应用在器件工艺中。但它在P-Si一侧引进一个深能级中心,其能级位置在Ev+0.38eV,浓度分布为(-3)×10~(12)cm~(-3);在N-Si一侧引进三个深能级中心:E_c-0.22eV,E_c—0.40eV和E_c-0.55eV,其浓度分布在(1.6—2.6)×10~(11)cm~(-3)。有关参数表明,它对器件的性能有一定的影响。

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 1993

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