Abstract: 用热丝协助化学气相沉积法,用B2O3作掺杂剂,用丙酮作碳源,成功地合成了硼掺杂半导体金刚石薄膜.本文报道了未掺杂和硼掺杂金刚石膜红外光谱的研究结果.实验结果表明:在0.308eV和0.341eV处产生的吸收是由于金刚石膜中硼原子的基态到第一、第二激发态的跃迁引起的.这个结果证实了硼原子在金刚石膜中以替位方式存在.
Article views: 1655 Times PDF downloads: 1288 Times Cited by: 0 Times
Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1995
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2