Chin. J. Semicond. > Volume 16 > Issue 6 > Article Number: 468

硼掺杂半导体金刚石薄膜的合成与红外吸收特性

张仿清,谢二庆,杨斌,才永明,陈光华

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Abstract: 用热丝协助化学气相沉积法,用B2O3作掺杂剂,用丙酮作碳源,成功地合成了硼掺杂半导体金刚石薄膜.本文报道了未掺杂和硼掺杂金刚石膜红外光谱的研究结果.实验结果表明:在0.308eV和0.341eV处产生的吸收是由于金刚石膜中硼原子的基态到第一、第二激发态的跃迁引起的.这个结果证实了硼原子在金刚石膜中以替位方式存在.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1995

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