Chin. J. Semicond. > Volume 17 > Issue 9 > Article Number: 689

短沟道CMOS/SOI器件加固技术研究

张兴,奚雪梅,王阳元

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Abstract: 通过大量辐照实验分析了采用不同工艺和不同器件结构的薄膜短沟道CMOS/SIMOX器件的抗辐照特性,重点分析了H2-O2合成氧化和低温干氧氧化形成的薄栅氧化层、CoSi2/多晶硅复合栅和多晶硅栅以及环形栅和条形栅对CMOS/SIMOX器件辐照特性的影响,最后得到了薄膜短沟道CMOS/SIMOX器件的抗核加固方案.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 September 1996

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