Chin. J. Semicond. > Volume 17 > Issue 9 > Article Number: 693

注氟SIMOX隐埋SiO_2的辐照感生电荷分布特性

竺士炀,林成鲁,高剑侠,李金华

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Abstract: 对常规工艺制备的SIMOX(SeparationbyIMplantationofOXygen)材料,注入不同剂量的F+并退火,其电容经(60)Coγ射线电离辐照后平带电压漂移较小,通过同理论值相比较,说明F+的注入减少了SIMOX隐埋SiO2层(BOX:BuriedOXide)的空穴陷阱浓度,增强了SIMOX的抗电离辐照能力.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 September 1996

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