Chin. J. Semicond. > Volume 18 > Issue 5 > Article Number: 321

低阈值电流密度INGaAs/GaAs/AlGaAs应变量子阱激光器

徐遵图 , 徐俊英 , 杨国文 , 张敬明 , 陈昌华 , 何晓曦 , 陈良惠 and 沈光地

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Abstract: 利用分子束外延技术,生长了极低阈值电流密度、低内损耗、高量子效率的InGaAs/GaAs/AlGaAs应变量子阱激光器.在腔长900μm时,80μm宽接触激光器阈值电流密度是125A/cm2,在腔长为2000μm时是113A/cm2,这样低的阈值电流密度是目前国内报道的最低值.激光器的内损耗和内量子效率分别是2cm-1和84%.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 May 1997

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