Chin. J. Semicond. > Volume 3 > Issue 2 > Article Number: 89

用C-V法同时测量半导体中深中心和浅杂质的浓度分布

秦国刚 , 杜永昌 and 张玉峰

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Abstract: 测量半导体深中心浓度分布和测量浅杂质浓度分布一样,是一个十分重要的问题.本文提出用C-V 法同时确定半导体中深中心和浅杂质浓度分布的方法,在深中心浓度和浅杂质浓度可比的情况下,它的结果尤为精确.文中讨论了测试原理和测试方法并以掺金硅N~+-P结二极管和汽相外延N型砷化镓肖脱基二极管为例进行了测量.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 1982

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