Chin. J. Semicond. > Volume 3 > Issue 2 > Article Number: 95

用X射线双晶及三晶衍射仪测量晶片的研磨和抛光损伤

许顺生 , 徐景阳 and 谭儒环

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Abstract: 介绍了用X射线双晶及三晶衍射仪检验半导体晶片研磨及抛光损伤的原理及方法.利用双晶衍射结合腐蚀剥层方法能够定量测定晶片研磨损伤层深度.提出用双晶及三晶衍射方法可以非破坏性地检验晶片的抛光质量,并能比较不同抛光工艺的效果.采用建议的三晶衍射方法检验多种不同晶片时,可以不必更换参考晶片,因而有迅速、方便的优点.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 1982

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