Chin. J. Semicond. > Volume 3 > Issue 2 > Article Number: 102

饱和电容法快速确定体产生寿命和表面产生速度

张秀淼

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Abstract: 本文分析了线性电压扫描下MOS电容的C-t瞬态响应,在此基础上,发展了一种快速确定体产生寿命和表面产生速度的新方法.该方法实验手续和计算均较简单,适于在需要确定很多样品的体产生寿命和表面产生速度场合下应用.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 1982

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