Chin. J. Semicond. > Volume 4 > Issue 6 > Article Number: 560

半绝缘InP注硅的无包封退火

乔墉 , 卢建国 , 罗潮渭 , 邵永富 and 王渭源

+ Author Affiliations + Find other works by these authors

PDF

Abstract: 掺Fe半绝缘 InP材料室温下注入Si~+,在 650℃无包封退火15 min,辐射损伤已可消除;但是Si的充分电激活则需要较高的退火温度.无包封下即使在 750℃退火 30 min,样品表面貌相也未被破坏.用能量E=150keV注入Si~+、剂量φ为1× 10~(13)、5 × 10~(13)和1×10~(14)cm~(-2)的样品.在750℃无包封退火15min,最高载流子浓度n_s分别是8×10~(13)、3.9×10~(13)和 6.3 ×10~(13)cm~(-2),其中φ为 1×10~(13)cm~(-2)的样品,霍耳迁移率μ_n为 2100 cm~2/V·scc.

Search

Advanced Search >>

Article Metrics

Article views: 1751 Times PDF downloads: 747 Times Cited by: 0 Times

History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 June 1983

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误