Chin. J. Semicond. > Volume 17 > Issue 7 > Article Number: 540

可调节势垒高度的Al/Si_(1—x)Gex肖特基接触

江若琏,李健,周晓春,刘建林,郑有

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Abstract: 本文首次报道了Al/p-Si1-xGex肖特基(Schottky)接触的制备与电学性质.Si1-xGex/Si应变外延层采用快速加热、超低压化学气相淀积方法生长.实验表明,改变Ge组分x的大小可以调节肖特基势垒高度.随着Ge组分的增大,肖特基势垒高度降低,其降低值与Si1-xGex应变层带隙的降低值相一致,界面上费米能级钉扎于导带下约0.43eV处.文中还研究了SiGe合金层的应变弛豫以及Si顶层对肖特基接触特性的影响.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 July 1996

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